- GaAs has refractive index and extinction coefficient at 633 nm are 3.857 and 0.198 respectively.
Calculate the surface reflectivity for that wave length of light. What would be the velocity of light in this semiconductor? - Transitional Metal Oxide materials are considered as high bandgap semiconductor. They are also used as ARC on solar cell. Such a material is TiO 2 , which has refractive index of 2.874, what would be its thickness to use it ARC for GaAs solar cell for the light of wave length (WL) of 633 nm and 6.33 micron? (
- Considering surrounding air has refractive index of 1, calculate the optimum refractive index, n for a material to be used on GaAs surface as ARC.
- When TiO2 is used as ARC on GaAs solar cell, calculate the reflectivity of the surface.
- If you want to use DLARC for GaAs solar cell and want to use SiO 2 having n=1.43 on top of TiO 2 , calculate the reflectivity of the surface now.
- For a typical silicon solar cell where ρ= 40 Ω/sq, J mp = 30 mA/cm 2 , V mp = 450 mV, to have a power loss in the emitter of less than 4%, calculate the finger spacing.
Reference:
https://www.filmetrics.com/refractive-index-databa.
Sample Solution