Insulated-gate bipolar transistor (IGBT)

    Description   Write an essay on Insulated-gate bipolar transistor (IGBT) based on the followin" rel="nofollow">ing;     Introduction to lGBT How it works and differs from silicon controlled rectifier (SCR) Advantages and disadvantages of usin" rel="nofollow">ing lGBT in" rel="nofollow">in variable speed dive (VSD) in" rel="nofollow">in the “in" rel="nofollow">inverter” pan- What happens in" rel="nofollow">in case of a fault in" rel="nofollow">in the lGBT On the VSD in" rel="nofollow">inverter part), fault in" rel="nofollow">in 1 phase and fault in" rel="nofollow">in 2 phases   Explain" rel="nofollow">in the effect of a fault in" rel="nofollow">in the lGBT on the motor derived by the VSD in" rel="nofollow">in terms of curent, vibration, performance